An electronic device includes a semiconductor memory comprising row lines, column lines, memory cells, and a plurality of contact plugs including row contact plugs respectively coupled to the row lines and column contact plugs respectively coupled to the column lines. Each memory cell is coupled to a row line and a column line, and has a current path comprising a portion of that row line and a portion of that column line. First and second contact plug are respectively coupled to first and second memory cells respectively having first and second current paths. A resistance of the first current path is lower than a resistance of the second current path, and a resistance of the first contact plug is increased relative to a resistance of the second contact plug to offset the lower resistance of the first current path.