An embodiment of a semiconductor device includes a semiconductor substrate, a first dielectric layer disposed over a semiconductor substrate, a source electrode and a drain electrode formed over the semiconductor substrate within openings formed in the first dielectric layer, a gate electrode formed over the semiconductor substrate between the source electrode and the drain electrode, and a protection layer disposed on the source electrode, the drain electrode, and the first dielectric layer, wherein a first edge of the protection layer terminates the protection layer between the source electrode and the gate electrode, and a second edge of the protection layer terminates the protection layer between the gate electrode and the drain electrode. A method for fabricating the semiconductor devices includes forming a first dielectric layer over the semiconductor substrate, forming source and drain electrodes, depositing the protection layer over the source and drain electrodes, and forming the gate electrode.