Invention Grant
- Patent Title: Semiconductor package and method of forming the same
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Application No.: US16687790Application Date: 2019-11-19
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Publication No.: US10741512B2Publication Date: 2020-08-11
- Inventor: Chi-Hsi Wu , Der-Chyang Yeh , Hsien-Wei Chen , Jie Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L29/40 ; H01L23/00 ; H01L23/498 ; H01L21/48 ; H01L23/538 ; H01L21/56 ; H01L23/48 ; H01L25/065 ; H01L25/00 ; H01L23/31 ; H01L23/532 ; H01L29/06
Abstract:
An embodiment is a method including forming a first passive device in a first wafer, forming a first dielectric layer over a first side of the first wafer, forming a first plurality of bond pads in the first dielectric layer, planarizing the first dielectric layer and the first plurality of bond pads to level top surfaces of the first dielectric layer and the first plurality of bond pads with each other, hybrid bonding a first device die to the first dielectric layer and at least some of the first plurality of bond pads, and encapsulating the first device die in a first encapsulant.
Public/Granted literature
- US20200083187A1 Semiconductor Package and Method of Forming the Same Public/Granted day:2020-03-12
Information query
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