Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US15725766Application Date: 2017-10-05
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Publication No.: US10741537B2Publication Date: 2020-08-11
- Inventor: Hsiang-Tai Lu , Shuo-Mao Chen , Mill-Jer Wang , Feng-Cheng Hsu , Chao-Hsiang Yang , Shin-Puu Jeng , Cheng-Yi Hong , Chih-Hsien Lin , Dai-Jang Chen , Chen-Hua Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COOMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COOMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H01L23/538 ; H01L23/31 ; H01L23/00 ; H01L25/10 ; H01L21/48 ; H01L21/56 ; H01L21/66 ; H01L23/498 ; H01L23/522 ; H01L23/053
Abstract:
A method of manufacturing a semiconductor structure includes forming a redistribution layer (RDL); forming a conductive member over the RDL; performing a first electrical test through the conductive member; disposing a first die over the RDL; performing a second electrical test through the conductive member; and disposing a second die over the first die and the conductive member.
Public/Granted literature
- US20180204828A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-07-19
Information query
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