The present disclosure provides a FINFET device integrated with a TFET and its manufacturing method. Two end portions of the fin structure respectively form an N-type doped drain and a source which is consisted by a top P-type doped region and a bottom N-type doped region. As a result, the bottom N-type doped region of the source, the drain, the channel, the high-k dielectric layer and the gate structure on the surface of the sidewall of the fin structure form a MOS FINFET device, and the top P-type doped region of the source, the drain, the channel, the high-k dielectric layer and the gate structure on the top surface of the fin structure form the TFET device. The integration of the TFET and the FINFET is achieved, which decreases the cost.