Invention Grant
- Patent Title: Reverse-conducting insulated gate bipolar transistor
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Application No.: US16362165Application Date: 2019-03-22
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Publication No.: US10741550B2Publication Date: 2020-08-11
- Inventor: Hayato Nakano , Keiichi Higuchi , Akihiro Osawa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2385ad1e
- Main IPC: H01L27/07
- IPC: H01L27/07 ; H01L23/495 ; H01L29/417 ; H01L29/739

Abstract:
A reverse-conducting semiconductor device includes a semiconductor chip having a top surface, a first side and a second side orthogonal to the first side in a plan view, in which a plurality of transistor regions and a plurality of diode regions are alternately arranged and an upper-electrode is provided on top surface-sides of the transistor regions and the diode regions; and a wiring member having a flat-plate portion having a rectangular-shape which is metallurgically jointed to the upper-electrode via a joint member above the diode regions. The wiring member has a conductive wall rising from a bending edge of the flat-plate portion in a direction opposite to the upper-electrode, and the bending edge of the flat-plate portion is arranged parallel to the first side.
Public/Granted literature
- US20190355718A1 REVERSE-CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR Public/Granted day:2019-11-21
Information query
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