A nonvolatile memory device includes an active region extending in a first direction and including a source region and a drain region that are respectively disposed at both ends of the active region, a gate electrode pattern extending in a second direction and disposed between the source region and the drain region, wherein the second direction extends across the first direction, a gate insulation pattern disposed between the gate electrode pattern and the active region, a source contact plug and a drain contact plug respectively coupled to the source region and the drain region, and a coupling contact plug disposed over the gate electrode pattern and insulated from the gate electrode pattern.