Invention Grant
- Patent Title: Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method the same
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Application No.: US15450220Application Date: 2017-03-06
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Publication No.: US10741587B2Publication Date: 2020-08-11
- Inventor: Katsuaki Tochibayashi , Ryota Hodo
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@21a2a92f
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/423 ; H01L29/786 ; H01L23/522 ; H01L23/528 ; H01L23/544 ; H01L27/32 ; H01L29/66
Abstract:
A semiconductor device including a transistor having high reliability is provided. The semiconductor device includes a transistor. The transistor includes first and second gate electrodes, a source electrode, a drain electrode, first to third oxides, first and second barrier films, and first and second gate insulators. The first barrier film is located over the source electrode, the second barrier film is located over the drain electrode, and the first and second barrier films each have a function of blocking oxygen and impurities such as hydrogen.
Public/Granted literature
- US20170263651A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, MODULE, ELECTRONIC DEVICE, AND MANUFACTURING METHOD THE SAME Public/Granted day:2017-09-14
Information query
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