Invention Grant
- Patent Title: Field-effect transistors having contacts to 2D material active region
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Application No.: US16404289Application Date: 2019-05-06
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Publication No.: US10741646B2Publication Date: 2020-08-11
- Inventor: Ling-Yen Yeh , Yee-Chia Yeo , Chi-Wen Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/778 ; H01L29/423 ; H01L29/66 ; H01L29/06 ; H01L29/24 ; H01L27/088 ; H01L29/08 ; H01L29/78
Abstract:
Exemplary FET devices having 2D material layer active regions and methods of fabricating thereof are described. For example, a black phosphorus active region has a first thickness in the channel region and a second, greater, thickness in the source/drain (S/D) region. The BP in the S/D region has a sidewall that interfaces a contact disposed over the FET. A gate electrode is disposed over the channel region. In some embodiments, the sidewall has passivated edge. In some embodiments, the sidewall is nonlinear. In some embodiments, the stress layer is disposed over the 2D material layer.
Public/Granted literature
- US20190326399A1 FIELD-EFFECT TRANSISTORS HAVING CONTACTS TO 2D MATERIAL ACTIVE REGION Public/Granted day:2019-10-24
Information query
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