Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15694934Application Date: 2017-09-04
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Publication No.: US10741650B2Publication Date: 2020-08-11
- Inventor: Tsutomu Fujita , Takanobu Ono , Makoto Minaminaka
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@68e8fe16
- Main IPC: H01L29/34
- IPC: H01L29/34 ; H01L21/268 ; H01L21/324 ; H01L23/00 ; H01L21/683 ; H01L21/78 ; H01L23/31
Abstract:
According to one embodiment, a semiconductor device includes a semiconductor element having a substrate with at least two bending portions formed on a first side surface thereof. The two bending portions are displaced from each other in a first direction that is perpendicular to the first side surface of the substrate and parallel to a front surface of the substrate and in a second direction parallel to the front surface of the substrate and perpendicular to a top surface of the substrate. A rearmost portion of the first side surface is substantially perpendicular to the front surface.
Public/Granted literature
- US20180277640A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-09-27
Information query
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