- Patent Title: Wrap-around-contact structure for top source/drain in vertical FETs
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Application No.: US16569739Application Date: 2019-09-13
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Publication No.: US10741652B2Publication Date: 2020-08-11
- Inventor: Choonghyun Lee , Christopher J. Waskiewicz , Alexander Reznicek , Hemanth Jagannathan
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent L. Jeffrey Kelly
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/417 ; H01L21/8234 ; H01L29/08 ; H01L29/45 ; H01L27/088 ; H01L29/78 ; H01L21/306 ; H01L21/3065 ; H01L21/02 ; H01L21/311 ; H01L29/51 ; H01L29/49 ; H01L21/28 ; H01L21/3105 ; H01L21/321

Abstract:
A method is presented for forming a wrap-around-contact. The method includes forming a bottom source/drain region adjacent a plurality of fins, disposing encapsulation layers over the plurality of fins, recessing at least one of the encapsulation layers to expose top portions of the plurality of fins, and for forming top spacers adjacent the top portions of the plurality of fins. The method further includes disposing a sacrificial liner adjacent the encapsulation layers, recessing the top spacers, forming top source/drain regions over the top portions of the plurality of fins, removing the sacrificial liner to create trenches adjacent the top source/drain regions, and depositing a metal liner within the trenches and over the top source/drain regions such that the wrap-around-contact is defined to cover an upper area of the top source/drain regions.
Public/Granted literature
- US20200075736A1 WRAP-AROUND-CONTACT STRUCTURE FOR TOP SOURCE/DRAIN IN VERTICAL FETS Public/Granted day:2020-03-05
Information query
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