Invention Grant
- Patent Title: Quantum dot devices with patterned gates
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Application No.: US16097432Application Date: 2016-06-08
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Publication No.: US10741664B2Publication Date: 2020-08-11
- Inventor: Ravi Pillarisetty , Jeanette M. Roberts , Hubert C. George , James S. Clarke , Nicole K. Thomas
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Patent Capital Group
- International Application: PCT/US2016/036315 WO 20160608
- International Announcement: WO2017/213637 WO 20171214
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778 ; H01L29/165 ; H01L29/423 ; H01L29/76 ; H01L29/06 ; H01L29/12 ; H01L29/78 ; B82Y10/00 ; B82Y40/00

Abstract:
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a plurality of first gates disposed on the quantum well stack; a plurality of pairs of spacers, each pair of spacers disposed on opposites sides of an associated first gate, wherein each spacer in a pair has a curved surface that curves away from the associated first gate; and a plurality of second gates disposed on the quantum well stack, wherein the curved surface of each spacer is adjacent to one of the second gates such that at least a portion of each second gate is shaped complementarily to the curved surface of an adjacent spacer.
Public/Granted literature
- US20190140073A1 QUANTUM DOT DEVICES WITH PATTERNED GATES Public/Granted day:2019-05-09
Information query
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