Invention Grant
- Patent Title: Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly
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Application No.: US16737242Application Date: 2020-01-08
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Publication No.: US10741681B2Publication Date: 2020-08-11
- Inventor: Chi-Chun Liu , Chun Wing Yeung , Chen Zhang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Amin, Turocy & Watson, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/66 ; H01L21/311 ; H01L21/02 ; H01L29/16 ; H01L21/308 ; H01L29/04 ; H01L29/20 ; H01L21/768

Abstract:
The present invention provides a method and a structure of increasing source and drain contact edge width in a two-dimensional material field effect transistor. The method includes patterning a two-dimensional material over an insulating substrate; depositing a gate dielectric over the two-dimensional material; depositing a top gate over the gate dielectric, wherein the top gate has a hard mask thereon; forming a sidewall spacer around the top gate; depositing an interlayer dielectric oxide over the sidewall spacer and the hard mask; removing the interlayer dielectric oxide adjacent to the sidewall spacer to form an open contact trench; depositing a copolymer coating in the contact trench region; annealing the copolymer to induce a directed self-assembly; performing a two-dimensional material etch over the two-dimensional material; removing the unetched copolymer without etching the gate dielectric; and etching the exposed gate in the source and the drain region to form a metal contact layer.
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