Invention Grant
- Patent Title: High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance
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Application No.: US15807237Application Date: 2017-11-08
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Publication No.: US10741682B2Publication Date: 2020-08-11
- Inventor: Woochul Jeon , Ali Salih , Llewellyn Vaughan-Edmunds
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/417 ; H01L29/08 ; H01L29/872 ; H01L29/66 ; H01L29/205 ; H01L29/20 ; H01L29/06 ; H01L29/40 ; H01L29/10
Abstract:
High-electron-mobility transistor (HEMT) devices are described in this patent application. In some implementations, the HEMT devices can include a back barrier hole injection structure. In some implementations, the HEMT devices include a conductive striped portion electrically coupled to a drain contact.
Public/Granted literature
- US20180138306A1 HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) SEMICONDUCTOR DEVICES WITH REDUCED DYNAMIC RESISTANCE Public/Granted day:2018-05-17
Information query
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