Invention Grant
- Patent Title: Structure and method for integrated circuit
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Application No.: US15803238Application Date: 2017-11-03
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Publication No.: US10741688B2Publication Date: 2020-08-11
- Inventor: Shin-Jiun Kuang , Tsung-Hsing Yu , Yi-Ming Sheu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L21/8238 ; H01L29/267 ; H01L29/66 ; H01L27/092 ; H01L29/165

Abstract:
The present disclosure provides many different embodiments of an IC device. The IC device includes a gate stack disposed over a surface of a substrate and a spacer disposed along a sidewall of the gate stack. The spacer has a tapered edge that faces the surface of the substrate while tapering toward the gate stack. Therefore the tapered edge has an angle with respect to the surface of the substrate.
Public/Granted literature
- US20180061986A1 Structure and Method for Integrated Circuit Public/Granted day:2018-03-01
Information query
IPC分类: