Invention Grant
- Patent Title: Plasmonic light emitting diode
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Application No.: US16272374Application Date: 2019-02-11
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Publication No.: US10741720B2Publication Date: 2020-08-11
- Inventor: Yaojia Chen , Ning Li , Devendra K. Sadana , Jinghui Yang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/06 ; H01L33/30 ; H01L33/60 ; H01L33/58 ; B82Y10/00 ; B82Y30/00 ; H01L33/64 ; B82Y20/00
Abstract:
A light emitting diode includes a square quantum well structure, the quantum well structure including III-V materials. A dielectric layer is formed on the quantum well structure. A plasmonic metal is formed on the dielectric layer and is configured to excite surface plasmons in a waveguide mode that is independent of light wavelength generated by the quantum well structure to generate light.
Public/Granted literature
- US20190189842A1 PLASMONIC LIGHT EMITTING DIODE Public/Granted day:2019-06-20
Information query
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