The present disclosure relates to a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a semiconductor substrate, a first pillar and a second pillar over the semiconductor substrate, an isolation layer over the semiconductor substrate, and a first contact pad and a second contact pad embedded in the isolation layer. A first upper surface of the first pillar is higher than a second upper surface of the second pillar. The first pillar and the second pillar are laterally surrounded by the isolation layer. The first contact pad is disposed over the first pillar. The second contact pad is disposed over the second pillar, and a first pad width of the first contact pad is not greater than a second pad width of the second contact pad.