Invention Grant
- Patent Title: Organic thin film transistor, and fabricating method thereof
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Application No.: US15501286Application Date: 2016-08-15
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Publication No.: US10741767B2Publication Date: 2020-08-11
- Inventor: Leilei Cheng
- Applicant: BOE TECHNOLOGY GROUP CO., LTD
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD
- Current Assignee Address: CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@64ae975
- International Application: PCT/CN2016/095305 WO 20160815
- International Announcement: WO2017/128697 WO 20170803
- Main IPC: H01L51/05
- IPC: H01L51/05 ; H01L51/00

Abstract:
In accordance with various embodiments of the disclosed subject matter, an organic thin film transistor, and a fabricating method thereof are provided. In some embodiments, the method for forming an organic thin film transistor (OTFT), comprising: forming a transparent gate layer on a transparent base substrate; forming a first initial silicone polymer layer on the transparent gate layer; and performing an oxidization process to partially oxidize the first initial silicone polymer layer to form a gate insulating layer, including an oxidized inorganic sub-layer that contacts the transparent gate layer, and a non-oxidized organic sub-layer.
Public/Granted literature
- US20180053896A1 ORGANIC THIN FILM TRANSISTOR, AND FABRICATING METHOD THEREOF Public/Granted day:2018-02-22
Information query
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