Invention Grant
- Patent Title: Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture
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Application No.: US16230624Application Date: 2018-12-21
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Publication No.: US10742174B2Publication Date: 2020-08-11
- Inventor: Jeffrey Spencer Roberts , Ning Zhu , Damon G. Holmes , Jeffrey Kevin Jones
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Sherry W. Schumm
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F1/42 ; H03F1/56 ; H03F3/195 ; H03F3/21 ; H03H11/28

Abstract:
Embodiments of RF amplifiers and RF amplifier devices include a transistor, a multiple-section bandpass filter circuit, and a harmonic termination circuit. The bandpass filter circuit includes a first connection node coupled to the amplifier input, a first inductive element coupled between the first connection node and a ground reference node, a first capacitance coupled between the first connection node and a second connection node, a second capacitance coupled between the second connection node and the ground reference node, and a second inductive element coupled between the second connection node and the transistor input. The harmonic termination circuit includes a third inductive element and a third capacitance connected in series between the transistor input and the ground reference node. The harmonic termination circuit resonates at a harmonic frequency of a fundamental frequency of operation of the RF amplifier.
Information query
IPC分类: