Invention Grant
- Patent Title: Silicon wafer polishing composition
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Application No.: US15602679Application Date: 2017-05-23
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Publication No.: US10745588B2Publication Date: 2020-08-18
- Inventor: Kohsuke Tsuchiya , Hisanori Tansho , Taiki Ichitsubo , Yoshio Mori
- Applicant: FUJIMI INCORPORATED , TOAGOSEI CO., LTD.
- Applicant Address: JP Kiyosu-Shi JP Tokyo
- Assignee: FUJIMI INCORPORATED,TOAGOSEI CO., LTD.
- Current Assignee: FUJIMI INCORPORATED,TOAGOSEI CO., LTD.
- Current Assignee Address: JP Kiyosu-Shi JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@33fd6406 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@b8e53e7
- Main IPC: C09G1/02
- IPC: C09G1/02 ; C09K3/14 ; H01L21/02 ; B24B37/04 ; B24B37/00

Abstract:
This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.
Public/Granted literature
- US20170253767A1 SILICON WAFER POLISHING COMPOSITION Public/Granted day:2017-09-07
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