Invention Grant
- Patent Title: Pellicle fabrication methods and structures thereof
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Application No.: US16228339Application Date: 2018-12-20
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Publication No.: US10747103B2Publication Date: 2020-08-18
- Inventor: Yun-Yue Lin , Hsuan-Chen Chen , Chih-Cheng Lin , Hsin-Chang Lee , Yao-Ching Ku , Wei-Jen Lo , Anthony Yen , Chin-Hsiang Lin , Mark Chien
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F1/62
- IPC: G03F1/62 ; G03F1/24

Abstract:
A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.
Public/Granted literature
- US20190204730A1 PELLICLE FABRICATION METHODS AND STRUCTURES THEREOF Public/Granted day:2019-07-04
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