Invention Grant
- Patent Title: Method of pattern formation and method of producing polysilane resin precursor
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Application No.: US15855102Application Date: 2017-12-27
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Publication No.: US10747113B2Publication Date: 2020-08-18
- Inventor: Dai Shiota , Hiroki Chisaka , Kunihiro Noda , Kazuya Someya
- Applicant: TOKYO OHKA KOGYO CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Knobbe, Martens, Olson & Bear LLP.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3a073557
- Main IPC: G03F7/11
- IPC: G03F7/11 ; G03F7/075 ; G03F7/30 ; C07F7/08 ; C09D183/06 ; C08G77/18 ; C09D183/10 ; G03F7/32 ; G03F7/20 ; C08G77/42

Abstract:
A method of pattern formation. The method is capable of inhibiting a post-development residue from remaining on a support equipped with an electrode, and a method of producing a polysilane-polysiloxane resin precursor that is suitable for use in the method of pattern formation. The method of pattern formation includes forming a film of a silicon-containing composition on the support equipped with an electrode forming a film of a resin composition on the film of a silicon-containing composition, and forming the film of a resin composition into a pattern.
Public/Granted literature
- US20180181002A1 METHOD OF PATTERN FORMATION AND METHOD OF PRODUCING POLYSILANE RESIN PRECURSOR Public/Granted day:2018-06-28
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