Invention Grant
- Patent Title: Semiconductor structure including inter-layer dielectric
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Application No.: US16241734Application Date: 2019-01-07
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Publication No.: US10748809B2Publication Date: 2020-08-18
- Inventor: Ta-wei Sung , Ming-Hui Li , Ming-Ying Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/08 ; H01L29/66 ; H01L21/8234 ; H01L21/8238 ; H01L29/78 ; H01L21/265
Abstract:
A semiconductor structure includes a gate structure over a substrate. The semiconductor structure includes an inter-layer dielectric (ILD) over the substrate, wherein an upper portion of the ILD has a higher concentration of silicon atoms than a bottom portion of the ILD.
Public/Granted literature
- US20190164810A1 SEMICONDUCTOR STRUCTURE INCLUDING INTER-LAYER DIELECTRIC Public/Granted day:2019-05-30
Information query
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