Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
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Application No.: US16200930Application Date: 2018-11-27
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Publication No.: US10748817B2Publication Date: 2020-08-18
- Inventor: Cheng Long Zhang
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , SMIC New Technology Research and Development (Shanghai) Corporation
- Applicant Address: CN Shanghai CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,SMIC New Technology Research and Development (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,SMIC New Technology Research and Development (Shanghai) Corporation
- Current Assignee Address: CN Shanghai CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3e42bd1b
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/02 ; H01L21/3105 ; H01L21/311 ; H01L21/762 ; H01L29/66
Abstract:
A fabrication method for a semiconductor device is provided. The method includes: forming a semiconductor substrate including a first region and a second region; forming intrinsic fins protruding from the first region of the semiconductor substrate, and dummy fins protruding from the second region of the semiconductor substrate; forming a first isolation layer to cover a portion of sidewalls of the dummy fins and a portion of sidewalls of the intrinsic fins; forming a protection layer on surfaces of the intrinsic fins, to cover a portion of the intrinsic fins above a surface of the first isolation layer; removing the dummy fins and a portion of the first isolation layer in the second region; and forming a second isolation layer on the second region of the semiconductor substrate.
Public/Granted literature
- US20190172754A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2019-06-06
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