Invention Grant
- Patent Title: Protective layer for contact pads in fan-out interconnect structure and method of forming same
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Application No.: US15938451Application Date: 2018-03-28
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Publication No.: US10748869B2Publication Date: 2020-08-18
- Inventor: Chin-Chuan Chang , Tsei-Chung Fu , Jing-Cheng Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L23/522 ; H01L23/31 ; H01L21/56
Abstract:
A method includes providing a die having a contact pad on a top surface and forming a conductive protective layer over the die and covering the contact pad. A molding compound is formed over the die and the conductive protective layer. The conductive protective layer is exposed using a laser drilling process. A redistribution layer (RDL) is formed over the die. The RDL is electrically connected to the contact pad through the conductive protective layer.
Public/Granted literature
- US20180219000A1 Protective Layer for Contact Pads in Fan-out Interconnect Structure and Method of Forming Same Public/Granted day:2018-08-02
Information query
IPC分类:
