Invention Grant
- Patent Title: Semiconductor devices and methods of forming the same
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Application No.: US16033302Application Date: 2018-07-12
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Publication No.: US10748905B2Publication Date: 2020-08-18
- Inventor: Dong-jin Lee , Sang-kwan Kim , Ji-eun Lee , Sung-hak Cho , Seok-hyang Kim , So-yeon Shin
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1f0b2ff9
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/28 ; H01L23/528 ; H01L29/08 ; H01L29/423 ; H01L29/49 ; H01L29/51
Abstract:
Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.
Public/Granted literature
- US20180331111A1 SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME Public/Granted day:2018-11-15
Information query
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