Invention Grant
- Patent Title: Semiconductor devices and methods for fabricating the same
-
Application No.: US16053315Application Date: 2018-08-02
-
Publication No.: US10748910B2Publication Date: 2020-08-18
- Inventor: Chan-Sic Yoon , Dongoh Kim , Kiseok Lee , Sunghak Cho , Jemin Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3d924fe4
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/762 ; H01L21/311

Abstract:
A semiconductor device includes a substrate that includes a cell region and a peripheral circuit region, a cell insulating pattern disposed in the cell region of the substrate that defines a cell active region, and a peripheral insulating pattern disposed in the peripheral circuit region of the substrate that defines a peripheral active region. The peripheral insulating pattern includes a first peripheral insulating pattern having a first width and a second peripheral insulating pattern having a second width greater than the first width. A topmost surface of at least one of the first peripheral insulating pattern and the second peripheral insulating pattern is positioned higher than a topmost surface of the cell insulating pattern.
Public/Granted literature
- US20190214391A1 SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2019-07-11
Information query
IPC分类: