A semiconductor device includes a plurality of first conductive lines in a first wiring layer, a plurality of second conductive lines in a second wiring layer, and a plurality of memory cells between the first and second conductive lines in a first direction in a first region. A plurality of third conductive lines in the first wiring layer, a plurality of fourth conductive lines in the second wiring, and a plurality of first memory lines are in a second region. The third conductive lines extends in a second direction and are spaced from each other in a third direction. The fourth conductive lines extend in the second direction and are spaced in the third direction. The first memory lines are between the third conductive lines and the fourth conductive lines in the first direction. The first memory lines comprise the same materials as the memory cells.