Invention Grant
- Patent Title: Image sensors with organic photodiodes and methods for forming the same
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Application No.: US16017707Application Date: 2018-06-25
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Publication No.: US10748967B2Publication Date: 2020-08-18
- Inventor: Chin-Wei Liang , Chia-Shiung Tsai , Cheng-Yuan Tsai , Hsing-Lien Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/30
- IPC: H01L27/30 ; H01L27/146 ; H01L51/10
Abstract:
Embodiments of forming an image sensor with organic photodiodes are provided. Trenches are formed in the organic photodiodes to increase the PN junction interfacial area, which improves the quantum efficiency (QE) of the photodiodes. The organic P-type material is applied in liquid form to fill the trenches. A mixture of P-type materials with different work function values and thickness can be used to meet the desired work function value for the photodiodes.
Public/Granted literature
- US20180308901A1 Image Sensors with Organic Photodiodes and Methods for Forming the Same Public/Granted day:2018-10-25
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