Invention Grant
- Patent Title: Gate structure, semiconductor device and the method of forming semiconductor device
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Application No.: US16051002Application Date: 2018-07-31
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Publication No.: US10749008B2Publication Date: 2020-08-18
- Inventor: Chun-Hsiung Tsai , Kuo-Feng Yu , Chien-Tai Chan , Ziwei Fang , Kei-Wei Chen , Huai-Tei Yang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/49 ; H01L29/78 ; H01L21/225
Abstract:
A gate structure, a semiconductor device, and the method of forming a semiconductor device are provided. In various embodiments, the gate structure includes a gate stack and a doped spacer overlying a sidewall of the gate stack. The gate stack contains a doped work function metal (WFM) stack and a metal gate electrode overlying the doped WFM stack.
Public/Granted literature
- US20190006483A1 Gate Structure, Semiconductor Device and the Method of Forming Semiconductor Device Public/Granted day:2019-01-03
Information query
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