Invention Grant
- Patent Title: Circuit and electronic device including an enhancement-mode transistor
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Application No.: US16026897Application Date: 2018-07-03
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Publication No.: US10749019B2Publication Date: 2020-08-18
- Inventor: Woochul Jeon , Prasad Venkatraman
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Abel Schillinger, LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L27/06 ; H01L27/088

Abstract:
An electronic device can include a channel layer and a barrier layer overlying the channel layer. In an embodiment, the electronic device can include a component disposed along a current path between a gate terminal and a gate electrode of a first transistor. In another embodiment, the electronic device can include a second transistor wherein source and gate electrodes of the second transistor are coupled to the gate electrode of the first transistor, and a drain electrode of the second transistor is coupled to the gate terminal. A circuit can include a transistor and a diode. The transistor can include a drain, a gate, and a source, wherein the drain is coupled to a drain terminal, and the source is coupled to a source terminal. The diode can have an anode is coupled to the gate terminal, and a cathode is coupled to a gate of the transistor.
Public/Granted literature
- US20200013886A1 CIRCUIT AND ELECTRONIC DEVICE INCLUDING AN ENHANCEMENT-MODE TRANSISTOR Public/Granted day:2020-01-09
Information query
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