Disclosed herein is a conductive structure that serves as both a control terminal and a field plate for a transistor. The transistor includes a channel region including a portion located in a vertical sidewall of semiconductor material that separates an upper level portion and a lower level portion of the semiconductor material. An extended drain region includes a portion located in the lower portion of the semiconductor material. The conductive structure is laterally adjacent to the vertical sidewall and includes a first vertical side and an opposite second vertical side with the first vertical side being closer to the vertical component sidewall. The first side is vertically closer to the lower level portion of the semiconductor material than the second vertical side.