Invention Grant
- Patent Title: TFT substrate and method for making same
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Application No.: US16061653Application Date: 2016-12-06
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Publication No.: US10749039B2Publication Date: 2020-08-18
- Inventor: Yi-Chun Kao , Po-Li Shih , Wei-Chih Chang , I-Wei Wu
- Applicant: HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD. , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Shenzhen TW New Taipei
- Assignee: HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD.,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD.,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Shenzhen TW New Taipei
- Agency: ScienBiziP, P.C.
- International Application: PCT/CN2016/108670 WO 20161206
- International Announcement: WO2017/101708 WO 20170622
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/02 ; H01L27/12 ; H01L29/45 ; H01L29/66 ; H01L29/24 ; H01L21/465 ; H01L29/04 ; H01L29/417 ; H01L21/28 ; H01L21/768 ; H01L27/32

Abstract:
A high-performance TFT substrate (100) for a flat panel display includes a substrate (110), a first conductive layer (130) on the substrate (110), a semiconductor layer (103) positioned on the first conductive layer (130), and a second conductive layer (150) positioned on the semiconductor layer (103). The first conductive layer (130) defines a gate electrode (101). The second conductive layer (150) defines a source electrode (105) and a drain electrode (106) spaced apart from the source electrode (105). The second conductive layer (150) includes a first layer (151) on the semiconductor layer (103) and a second layer (152) positioned on the first layer (151). The first layer (151) can be made of metal oxide. The second layer (152) can be made of aluminum or aluminum alloy.
Public/Granted literature
- US20180374960A1 TFT SUBSTRATE AND METHOD FOR MAKING SAME Public/Granted day:2018-12-27
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