Invention Grant
- Patent Title: Substrate integrated waveguide and method for manufacturing the same
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Application No.: US16050991Application Date: 2018-07-31
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Publication No.: US10749237B2Publication Date: 2020-08-18
- Inventor: Kiryung Shin
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01P3/12
- IPC: H01P3/12 ; H01P11/00 ; H05K3/42 ; H05K3/00 ; H01L23/66 ; H01P1/208

Abstract:
A method for manufacturing a substrate integrated waveguide for a millimeter wave signal is disclosed. In the method, a gold layer is disposed on a top surface of the silicon substrate using a lift-off process. Next, two parallel rows of substantially equal spaced vias are formed in the silicon substrate using a through-silicon-via etching process. Then, a copper layer is disposed on the bottom side of the silicon substrate and on interior surfaces of each via. The separation between the copper layer and the gold layer define a height of the substrate integrated waveguide, while the separation between the two parallel rows of substantially equal spaced vias define a width of the substrate integrated waveguide. In some implementations the length of the substrate defines a length of the substrate integrated waveguide, and the length, width, and height define a resonator that is resonant at a millimeter wave frequency.
Public/Granted literature
- US20200044303A1 SUBSTRATE INTEGRATED WAVEGUIDE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2020-02-06
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