This TFT substrate includes a TFT provided with a gate electrode, a source electrode, and a drain electrode; a gate metal layer including the gate electrode; a gate insulating layer formed on the gate metal layer; and a source metal layer that is formed on the gate insulating layer and includes the source electrode, the drain electrode, and a patch electrode. The source metal layer includes a first metal layer that contains one of Ti, Mo, Ta, W and Nb, and a second metal layer that is formed on the first metal layer and contains one of Cu, Al, Ag and Au. The source electrode and the drain electrode each include the first metal layer and the second metal layer. A distance from the first metal layer of the source electrode to the first metal layer of the drain electrode in a channel direction is less than a distance from the second metal layer of the source electrode to the second metal layer of the drain electrode in the channel direction.