Invention Grant
- Patent Title: Power amplification circuit
-
Application No.: US16201407Application Date: 2018-11-27
-
Publication No.: US10749482B2Publication Date: 2020-08-18
- Inventor: Masatoshi Hase
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6af9ec46
- Main IPC: H03F1/56
- IPC: H03F1/56 ; H03F3/193 ; H03F1/02 ; H03F3/21

Abstract:
A power amplification circuit includes: a first amplifier that is input with a first signal and outputs a second signal; a bias circuit that supplies a bias current or voltage to the first amplifier; and a control voltage generating circuit that generates a control voltage in accordance with the first signal. The bias circuit includes a first transistor that outputs the bias current or voltage, a second transistor provided between the emitter or source of the first transistor and ground, and a third transistor that is supplied with the control voltage and that supplies a first current or voltage to the second transistor. The value of the first current or voltage when the signal level is a first level is larger than the value of the first current or voltage when the signal level is a second level. The first level is higher than the second level.
Public/Granted literature
- US20190097590A1 POWER AMPLIFICATION CIRCUIT Public/Granted day:2019-03-28
Information query