Invention Grant
- Patent Title: Method for forming multi-depth MEMS package
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Application No.: US16705627Application Date: 2019-12-06
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Publication No.: US10752495B2Publication Date: 2020-08-25
- Inventor: Wen-Chuan Tai , Fan Hu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Maufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Maufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: B81B7/02
- IPC: B81B7/02 ; B81C1/00

Abstract:
The present disclosure relates to a MEMS package having different trench depths, and a method of fabricating the MEMS package. In some embodiments, a first trench in a first device region, a second trench in a second region, and a scribe trench in a scribe line region are formed at a front side of a cap substrate. Then, a hard mask is formed and patterned over the cap substrate. Then, a stopper is formed by performing an etch to the cap substrate such that a first portion of a bottom surface of the first trench uncovered by the hard mask is recessed while a second portion of the bottom surface of the first trench covered by the hard mask is non-altered to form a stopper within the first trench. Then, a second etch is performed to the second trench to lower the bottom surface of the second trench.
Public/Granted literature
- US20200109046A1 METHOD FOR FORMING MULTI-DEPTH MEMS PACKAGE Public/Granted day:2020-04-09
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