- Patent Title: Surface-modified inorganic nitride, composition, thermally conductive material, device with thermally conductive layer, and method for manufacturing surface-modified inorganic nitride
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Application No.: US16198799Application Date: 2018-11-22
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Publication No.: US10752820B2Publication Date: 2020-08-25
- Inventor: Keita Takahashi
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: JCIPRNET
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4340e04f
- Main IPC: C09K5/14
- IPC: C09K5/14 ; C08L101/00 ; C01B21/072 ; C08G59/50 ; C01B21/064 ; C08G59/68 ; C08G59/32 ; C08K3/38 ; C08G59/24 ; C08K9/04 ; H01L23/373 ; C08K5/18 ; C08K3/28 ; C08K5/00 ; C08K5/14 ; C08K3/22
Abstract:
Provided are a novel surface-modified inorganic nitride, a composition, a thermally conductive material, a device with a thermally conductive layer, and a method for manufacturing a surface-modified inorganic nitride. The surface-modified inorganic nitride of the embodiment of the present invention contains an inorganic nitride and an onium salt adsorbed onto a surface of the inorganic nitride.
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