Invention Grant
- Patent Title: Material having single crystal perovskite, device including the same, and manufacturing method thereof
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Application No.: US15487769Application Date: 2017-04-14
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Publication No.: US10755924B2Publication Date: 2020-08-25
- Inventor: Bo-Yu Yang , Minghwei Hong , Jueinai Kwo , Yen-Hsun Lin , Keng-Yung Lin , Hsien-Wen Wan , Chao Kai Cheng , Kuan Chieh Lu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , National Taiwan University
- Applicant Address: TW Hsinchu TW Taipei
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Hsinchu TW Taipei
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/51 ; H01L21/28 ; H01L29/66
Abstract:
A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers and each of a plurality of second layers having compositions different from the plurality of first layers and forming a material having a Perovskite single crystal structure by annealing the plurality of first layers and the plurality of second layers.
Public/Granted literature
- US20170352539A1 MATERIAL HAVING SINGLE CRYSTAL PEROVSKITE, DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-12-07
Information query
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