Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
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Application No.: US15974476Application Date: 2018-05-08
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Publication No.: US10755935B2Publication Date: 2020-08-25
- Inventor: Yong Li
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@56265bad
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/02 ; H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L27/088
Abstract:
A semiconductor device and fabrication method are provided. The method includes providing a first dielectric layer with a first groove on a base substrate. A first gate electrode is formed in the first groove, with a top surface lower than the first dielectric layer. A first protective layer is formed on a portion of the top surface of the first gate electrode, with a first oxygen ionic concentration. A compensating protective layer is formed on a remaining portion of the top surface of the first gate electrode exposed by the first protective layer, with a second oxygen ionic concentration. A second dielectric layer is formed on the first protective layer, on the compensating protective layer, and on the first dielectric layer, with a third oxygen ionic concentration. The first oxygen ionic concentration and second oxygen ionic concentration are smaller than the third oxygen ionic concentration.
Public/Granted literature
- US20180330953A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2018-11-15
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