Invention Grant
- Patent Title: Etching method and plasma processing apparatus
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Application No.: US16212835Application Date: 2018-12-07
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Publication No.: US10755944B2Publication Date: 2020-08-25
- Inventor: Masahiro Tabata , Sho Kumakura
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6a3b6b95
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/67 ; H01J37/32
Abstract:
An etching method selectively etches a first region of a substrate with respect to a second region of the substrate. At least a portion of the first region, which includes the surface of the first region, is modified by plasma to form a first modified region. At least a portion of the second region, which includes the surface of the second region, is modified by plasma to form a second modified region. The first modified region is selectively etched with respect to the second modified region by plasma.
Public/Granted literature
- US20190259626A1 ETCHING METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2019-08-22
Information query
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