Invention Grant
- Patent Title: Metal wiring layer forming method, metal wiring layer forming apparatus and recording medium
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Application No.: US16331612Application Date: 2017-08-29
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Publication No.: US10755973B2Publication Date: 2020-08-25
- Inventor: Keiichi Fujita , Kazutoshi Iwai , Nobutaka Mizutani
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@de98f7
- International Application: PCT/JP2017/030991 WO 20170829
- International Announcement: WO2018/074072 WO 20180426
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/768 ; C23C18/32 ; H01L21/288 ; C23C18/52 ; H01L23/522 ; C23C18/16 ; C23C18/18 ; H01L21/3213 ; H01L23/532
Abstract:
A metal wiring layer can be formed within a recess of a substrate and an unnecessary plating layer is not left on a surface of the substrate. A metal wiring layer forming method includes forming a first plating layer 7 as a protection layer at least on a tungsten or tungsten alloy 4 formed on a bottom surface 3a of a recess 3 of a substrate 2; removing an unnecessary plating layer 7a formed on a surface 2a of the substrate 2; and forming a second plating layer 8 on the first plating layer 7 within the recess 3.
Public/Granted literature
- US20190229016A1 METAL WIRING LAYER FORMING METHOD, METAL WIRING LAYER FORMING APPARATUS AND RECORDING MEDIUM Public/Granted day:2019-07-25
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