A half-bridge power semiconductor module includes an insulating wiring board including a positive-electrode wiring conductor, a bridge wiring conductor, and a negative-electrode wiring conductor arranged on or above a single insulating plate in such a way as to be electrically insulated from each other. The back-surface electrodes of a high-side power semiconductor device and a low-side power semiconductor device are joined to the front sides of the positive-electrode wiring conductor and the bridge wiring conductor. Front-surface electrodes of the high-side power semiconductor device and the low-side power semiconductor device are connected to the bridge wiring conductor and the negative-electrode wiring conductor by a plurality of bonding wires and a plurality of bonding wires.