Invention Grant
- Patent Title: Methods of forming integrated assemblies
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Application No.: US16294792Application Date: 2019-03-06
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Publication No.: US10756093B1Publication Date: 2020-08-25
- Inventor: Deepak Chandra Pandey , Kamal M. Karda , Haitao Liu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L25/18 ; H01L29/417 ; G11C11/407

Abstract:
Some embodiments include a method of forming an integrated assembly. Conductive blocks are formed over a construction. Each of the conductive blocks is over a set which includes a pair of storage-element-contact-regions and a digit-line-contact-region. Each of the conductive blocks is entirely laterally surrounded by first insulative material. Central regions of the conductive blocks are removed to split each of the conductive blocks into a first conductive portion over one of the storage-element-contact-regions and a second conductive portion over another of the storage-element-contact-regions. Second insulative material is formed between the first and second conductive portions. Digit-lines are coupled with the digit-line-contact-regions, and storage-elements are coupled with the storage-element-contact-regions.
Public/Granted literature
- US20200286899A1 METHODS OF FORMING INTEGRATED ASSEMBLIES Public/Granted day:2020-09-10
Information query
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