Invention Grant
- Patent Title: Insulating magnetic components on silicon using PNP or NPN junctions
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Application No.: US15993966Application Date: 2018-05-31
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Publication No.: US10756160B2Publication Date: 2020-08-25
- Inventor: Kapila Warnakulasuriya
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Keating & Bennett, LLP
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/761 ; H01L29/06 ; H01L23/64
Abstract:
A magnetic component includes a semiconductor substrate, a first winding that is located in the semiconductor substrate and that includes at least two turns, and intra-winding insulation located between two adjacent turns of the at least two turns and including doped regions in the semiconductor substrate that define either an NPN-junction or a PNP junction.
Public/Granted literature
- US20180350894A1 INSULATING MAGNETIC COMPONENTS ON SILICON USING PNP OR NPN JUNCTIONS Public/Granted day:2018-12-06
Information query
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