A diode has a semiconductor body having a first and a second semiconductor body main side. The semiconductor body has a first semiconductor zone. The semiconductor body has a second semiconductor zone arranged on the first semiconductor zone in an inner region of the semiconductor body and not extending as far as the semiconductor body edge of the semiconductor body. The semiconductor body has a third semiconductor zone arranged on the second semiconductor zone and has a higher doping concentration than the second semiconductor zone. The semiconductor body has a fourth semiconductor zone arranged on the first semiconductor zone in a semiconductor body edge region and extending from the second semiconductor zone in the direction towards the semiconductor body edge as far as the semiconductor body edge.