According to one embodiment, a semiconductor device include first and second electrodes, first, second, third, fourth, fifth, and sixth semiconductor regions, a gate electrode, and an interconnect portion. The first semiconductor region is provided on the first electrode. The second semiconductor region is electrically connected to the first electrode and provided around the first semiconductor region. The third semiconductor region is provided on the first and second semiconductor regions. The fourth semiconductor region is provided on a portion of the third semiconductor region. The fifth semiconductor region is provided selectively on the fourth semiconductor region. The gate electrode opposes the fifth and fourth semiconductor regions, and the portion. The sixth semiconductor region is provided on another portion of the third semiconductor region. The second electrode is provided on the fourth and fifth semiconductor regions. The interconnect portion is electrically connected to the gate electrode.