Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
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Application No.: US16358705Application Date: 2019-03-20
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Publication No.: US10756182B2Publication Date: 2020-08-25
- Inventor: Takahiro Tamura , Yuichi Onozawa , Takashi Yoshimura , Hiroshi Takishita , Akio Yamano
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2c96ca9b
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/739 ; H01L29/12 ; H01L29/32 ; H01L29/36 ; H01L29/66 ; H01L29/861 ; H01L27/07 ; H01L21/265 ; H01L29/40 ; H01L21/225 ; H01L21/266 ; H01L21/324 ; H01L27/06 ; H01L29/10 ; H01L21/263 ; H01L21/322
Abstract:
Provided is a semiconductor device including a semiconductor substrate doped with impurities, a front surface-side electrode provided on a front surface side of the semiconductor substrate, a back surface-side electrode provided on a back surface side of the semiconductor substrate, wherein the semiconductor substrate has a peak region arranged on the back surface side of the semiconductor substrate and having one or more peaks of impurity concentration, a high concentration region arranged closer to the front surface than the peak region and having a gentler impurity concentration than the one or more peaks, and a low concentration region arranged closer to the front surface than the high concentration region and having a lower impurity concentration than the high concentration region.
Public/Granted literature
- US20190214462A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2019-07-11
Information query
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