- Patent Title: Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing same, and semiconductor device
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Application No.: US13811586Application Date: 2011-07-26
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Publication No.: US10756190B2Publication Date: 2020-08-25
- Inventor: Yoshiomi Hiroi , Shinichi Maeda
- Applicant: Yoshiomi Hiroi , Shinichi Maeda
- Applicant Address: JP Tokyo
- Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
- Current Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@75ccdd1
- International Application: PCT/JP2011/066950 WO 20110726
- International Announcement: WO2012/014885 WO 20120202
- Main IPC: H01L29/24
- IPC: H01L29/24 ; C04B35/01 ; H01L21/02 ; H01L29/786 ; C04B35/626 ; C04B35/453
Abstract:
The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.
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