A gate driver integrated circuit is provided. The gate driver integrated circuit includes a substrate having a drift region of a first doping type therein, and a field effect transistor including a drain region of the first doping type, a source region of the first doping type, and a gate structure. The gate driver integrated circuit also includes a first well region of a second doping type and a first contact region of the second doping type. Each of the first well region and the drain region is formed in the drift region, the source region is formed in the first well region, and an end portion of the gate structure near the source region covers a portion of the first well region. Further, the gate driver integrated circuit includes a field plate structure formed on the substrate and disposed between the source region and the drain region.